Extended charge layers in metal-oxide-semiconductor nanocapacitors revealed by operando electron holography

HIGHLIGHTS

  • who: C. Gatel and collaborators from the , rue Jeanne Marvig, Toulouse, France have published the research: Extended Charge Layers in Metal-Oxide-Semiconductor Nanocapacitors Revealed by Operando Electron Holography, in the Journal: (JOURNAL) of 19/09/2022
  • how: Electron holography experiments were carried out in Lorentz mode on an HF3300-C (Hitachi) equipped with a BCOR aberration corrector from CEOS and using two postspecimen biprisms to allow flexibility in the holographic configurations and to eliminate the Fresnel fringe artifacts .

SUMMARY

    Metal-oxide-semiconductor (MOS) capacitors are widely used in many advanced . . .

     

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