HIGHLIGHTS
- who: AHMAD from the Laboratory of Electronics, Signal Processing and Physical Modeling, Ibn Zohr University, Faculty of Sciences, Morocco have published the paper: Extraction of series resistance and mobility degradation, in the Journal: (JOURNAL) of Jun/19,/2019
- what: In this work an iterative method is proposed to extract the and parameter in short channel MOSFETs. To validate the presented method, the MOSFET transistor measured in this work has the following parameters: channel width W=4µm, gate oxide thickness tox=5nm, channel length L=0.1µm, and channel doping Na=1016 cm-3 . . .
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