Extremely low excess noise avalanche photodiode with gaassb absorption region and algaassb avalanche region

HIGHLIGHTS

• who: Extremely low excess noise et al. from the Department The University of Sheffield, Sheffield , JD, United Kingdom have published the article: Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region, in the Journal: (JOURNAL)
• what: The authors demonstrate a GaAsSb/AlGaAsSb SAM-APD with low tunneling current, high usable avalanche gain, and extremely low excess noise factors. Compared to the wafer from the previous work the wafer for this work had increased thickness and doping density for the charge sheet layer.
• how: The excess noise data were . . .
  

   

  

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