HIGHLIGHTS
- who: Kim and collaborators from the This Article was downloaded from Harvard University have published the article: Focused Ion Beam Induced Deflections of Freestanding Thin Films, in the Journal: (JOURNAL) of 30/Nov/2006
- what: The authors propose that ion irradiation generates biaxial compressive stress in silicon nitride, as it is known to do in other amorphous materials at higher ion energies.2,3,9-18 In Fig 1, the authors show AFM topographs of square structures with dimensions of 4 ⫻ 4 m2 irradiated under uniform rastering to various doses. This contribution is negligible if . . .
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