HIGHLIGHTS
- who: Ruining Wang from the (UNIVERSITY) have published the research: Formation of resonant bonding during growth of ultrathin GeTe films, in the Journal: (JOURNAL)
- what: Subsequently, the authors investigate the decisive factors which govern the atomic arrangement by density function theory (DFT) calculations and by comparison with previous results on the Si(111)-(u221a3 u00d7 u221a3)R30u00b0-Sb surface.
SUMMARY
Epitaxial growth has also been reported for a class of resonantly bonded chalcogenide compounds, including GeTe, Sb2Te3 and GeSbTe alloys (GST).2-4 Resonant bonding in chalcogenides is a unique bonding . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.