Formation of ultra-high-resistance au/ti/p-gan junctions and the applications in algan/gan hemts

HIGHLIGHTS

• who: AlGaN/GaN HEMTs and collaborators from the School Southern University of Science and Technology (SUSTech), Shenzhen, China have published the Article: Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs, in the Journal: (JOURNAL)
• what: The authors report that ultra-low current, i.e., ultra-high resistance, can be achieved using Au/Ti/p-GaN within a particular process window, which is contrary to the observations in Refs. The 100 nm p-GaN/15 nm AlGaN/0.7 nm AlN/GaN buffer epitaxial structures used in . . .
  

   

  

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