HIGHLIGHTS
- who: GaAs/Ge/Si epitaxial substrates and collaborators from the InstituteNizhny Novgorod, Russia State University have published the article: GaAs/Ge/Si epitaxial substrates: Development and characteristics, in the Journal: (JOURNAL) of 18/01/2017
- what: Despite the urgency of this issue and multiple years of research aimed at solving this problem, no significant success has been achieved in this field so far . The authors report the data on structure, morphology, photoluminescence properties and the results of SIMS analysis of the GaAs/Ge/Si heterostructures.
- how: For PL measurements the authors used an . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.