HIGHLIGHTS
- who: GaN-on-diamond technology platform and collaborators from the School University of Glasgow, Glasgow , LT, United Kingdom have published the research work: GaN-on-diamond technology platform: Bonding-free membrane manufacturing process, in the Journal: (JOURNAL)
- what: The authors have shown that seeding the AlN layer initiates diamond growth, which is strongly bonded.
SUMMARY
Transistors created on a GaN-on-diamond material system have attracted significant interest in recent years due to their increased high frequency and high power handling potential when compared to commercially established GaN-on-SiC technologies . . .
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