Graphene bridge heterostructure devices for negative differential transconductance circuit applications

HIGHLIGHTS

  • who: Minjong Lee from the Department of Electrical and Computer Engineering, Inha University, Incheon, Republic of Korea have published the article: Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications, in the Journal: (JOURNAL)
  • what: The authors demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/ Gr-bridge/n-type molybdenum disulfide a channel material for field-effect transistors (FET).

SUMMARY

    Two-dimensional van der Waals (2D vdW) nanomaterials have provided intriguing opportunities for various applications in nanoelectronics. Because of this advantage, Gr electrodes are widely . . .

     

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