Graphene/ge photoconductive position-sensitive detectors based on the charge injection effect

HIGHLIGHTS

  • who: Genglin Li et al. from the School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China have published the Article: Graphene/Ge Photoconductive Position-Sensitive Detectors Based on the Charge Injection Effect, in the Journal: Nanomaterials 2023, 322 of /2023/
  • what: In this paper, a photoconductive type of PSD based on graphene/Ge heterojunction by using the charge injection effect is presented.

SUMMARY

    PSDs are optoelectronic position sensors that can accurately detect the light spot position, distance, incident angle, and other related physical parameters. Under near-infrared illumination . . .

     

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