Great potential of si-te ovonic threshold selector in electrical performance and scalability

HIGHLIGHTS

  • who: Renjie Wu and collaborators from the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, China University of Chinese Academy of Sciences, Beijing, China have published the research work: Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability, in the Journal: Nanomaterials 2023, 13, 1114. of /2023/
  • what: In this paper the influence of Si concentration on the electrical properties of Si-Te OTS materials is studied; the threshold voltage and leakage current remain basically unchanged with the . . .

     

    Logo ScioWire Beta black

    If you want to have access to all the content you need to log in!

    Thanks :)

    If you don't have an account, you can create one here.

     

Scroll to Top

Add A Knowledge Base Question !

+ = Verify Human or Spambot ?