Growth of gan thin films using plasma enhanced atomic layer deposition: effect of ammonia-containing plasma power on residual oxygen capture

HIGHLIGHTS

• who: Shicong Jiang et al. from the Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen, China have published the research: Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture, in the Journal: (JOURNAL)
• what: This study proposes and establishes the mechanism that increasing the free_radical of H in the NH3 +Ar plasma can reduce the oxygen contamination of PEALD- GaN films and also solves the problem of . . .
  

   

  

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