Heterogeneous cmos integration of ingaas-oi nmosfets and ge pmosfets based on dual-gate oxide technique

HIGHLIGHTS

• who: Xiaoyu Tang et al. from the School of Information and Communication Engineering, Nanjing Institute of Technology, Nanjing, China School of Electronic Science and Engineering, Nanjing University, Nanjing, China have published the research work: Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique, in the Journal: Micromachines 2022, 13, x FOR PEER(5 REVIEW + 20) nm-thick of /2022/
• what: In this work, the dual-gate stack fabrication method that combines but individually opoptimizes the InGaAs gate oxide and Ge gate oxide was developed to construct the intetimizes . . .
  

   

  

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