High‐conductivity stoichiometric titanium nitride for bioelectronics

HIGHLIGHTS

  • who: ufeff et al. from the Central European InstituteBrno University of have published the article: Highu2010Conductivity Stoichiometric Titanium Nitride for Bioelectronics, in the Journal: (JOURNAL)
  • what: The primary reason for poor performance on plastics is the necessity of high temperatures for achieving highquality TiN, which is incompatible with organic materials used in ultrathin flexible bioelectronics. The authors propose low-temperature method of TiN ion-beam sputter deposition, which can be used to obtain a highly stoichiometric material, with high electrical conductivity and large capacitive charge-injection capacity. The authors report detailed results for six types . . .

     

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