HIGHLIGHTS
- who: Charles Renard from the Université Universidad Politécnica de have published the article: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed, in the Journal: Scientific Reports Scientific Reports
- what: The authors demonstrate in this paper that the epitaxial lateral overgrowth of GaAs on nano patterned Si substrates with dielectric films appears to be the most promising technique. The authors show that some defects remaining on are avoided on orientation. The authors propose to call this growth method ELTOn for Epitaxial Lateral overgrowth on . . .
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