High frequency resistive switching behavior of amorphous tio2 and nio

HIGHLIGHTS

• who: Senad Bulja from the Wireless Communications LaboratoryUniversity of have published the research: High frequency resistive switching behavior of amorphous TiO2 and NiO, in the Journal: Scientific Reports Scientific Reports
• what: The authors examine the switching behaviour of amorphous (anatase phase) ­TiO2 and NiO covering both DC and high frequency regimes, to up to 20 GHz. The study shows that in the non-actuated state, T ­ iO2 is a dielectric with a dielectric permittivity of about 54 and a loss tangent in the region of 3 × ­10-4.
• future: These levels of reconfigurability . . .
  

   

  

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