High hole mobility p-type gan with low residual hydrogen concentration prepared by pulsed sputtering

HIGHLIGHTS

• who: Submitted et al. from the Institute of Industrial Science, The University of Tokyo, Komaba, Meguro, Tokyo, Japan , PRESTO, Japan Science and Technology Agency (JST), Honcho, Kawaguchi, Saitama, Japan , ACCEL, Japan Science and Technology Agency (JST), Sanbancho, Chiyoda-ku, Tokyo, Japan have published the paper: High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering, in the Journal: (JOURNAL) of 05/08/2016
• what: The authors have demonstrated the growth of p-type GaN with low hydrogen concentration using PSD and investigated how the concentrations of Mg dopant and residual . . .
  

   

  

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