High-order harmonic generation in a doped semiconductor by inhomogeneous laser field

HIGHLIGHTS

  • What: The authors investigate the effect of inhomogeneity parameter on undoped and doped semiconductor. By solving 1D-TDSE, the authors show that HHG process can be controlled. The study demonstrates that by controlling dopant species, doping rate and the laser field one can manipulate the HHG of the semiconductor.
  • Who: Njoroge from the Biological and Physical Sciences Department, Karatina University, Karatina, Kenya have published the Article: High-order Harmonic Generation in a Doped Semiconductor by Inhomogeneous Laser Field, in the Journal: (JOURNAL)

SUMMARY

    The authors study the influence of doping and . . .

     

    Logo ScioWire Beta black

    If you want to have access to all the content you need to log in!

    Thanks :)

    If you don't have an account, you can create one here.

     

Scroll to Top

Add A Knowledge Base Question !

+ = Verify Human or Spambot ?