HIGHLIGHTS
- who: Manuscript received et al. from the Centre: Singapore Hybrid-Integrated Next-Generation u00b5-Electronics The authors are with the Department of Electrical and Computer Engineering, National University of Singapore, Singapore have published the Article: High-Performance Top-Gated and Double-Gated Oxideu2013Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect, in the Journal: (JOURNAL)
- what: The authors demonstrate a low-thermal budget defect-engineered process to achieve top-gated (TG) oxide-semiconductor ferroelectric field-effect transistors (FeFETs). The study shows that heterojunction channel engineering on FETs and FeFETs can be a . . .
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