High performance visible-swir flexible photodetector based on large-area ingaas/inp pin structure

HIGHLIGHTS

• who: Xuanzhang Li from the Beijing Key Laboratory University of Sciences, Beijing, China have published the Article: High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure, in the Journal: Scientific Reports Scientific Reports
• what: In this paper, we have demonstrated the InGaAs-based membrane flexible PD with the detectivity of 5.18 u00d7 u00ad1011 cmu2027Hz1/2/W by a top-to-down fabrication technique using a sacrificial layer and transferring them onto a flexible host carrier.

SUMMARY

The process of device fabrication includes seven steps: constructing . . .

 



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