HIGHLIGHTS
- who: Ruitao Jia and collaborators from the School of Integrated Circuit Science and (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, China have published the paper: High-Throughput Growth of Hexagonal Boron Nitride Film Using Porous-Structure Isolation Layer, in the Journal: (JOURNAL)
- what: This work provides an easy and feasible method for high-throughput growth of h-BN, which may be helpful for the industrial application of h-BN.
SUMMARY
Hexagonal boron nitride (h-BN), with a graphene-like crystal_structure, is an important two-dimensional . . .
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