Highly reliable temperature sensor based on p-gan/algan/gan hybrid anode diode with wide operation temperature from 73 k to 573 k

HIGHLIGHTS

• who: An Yang and collaborators from the School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China have published the research work: Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K, in the Journal: Crystals 2023, 620 of /2023/
• what: This work shows that the HPT-HAD temperature sensor can be reliably operated over a wide temperature range from cryogenic to high temperatures so can be used in a variety of extreme environments. In this . . .
  

   

  

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