Hole-doping induced ferromagnetism in 2d materials

HIGHLIGHTS

  • who: Ruishen Meng from the (UNIVERSITY) have published the research: Hole-doping induced ferromagnetism in 2D materials, in the Journal: (JOURNAL)
  • how: In this work all the density functional theory calculations were performed using the Vienna ab initio simulation package (VASP) package5758 with electron-ion interaction described by projector augmented wave (PAW) pseudopotentials.

SUMMARY

    Similar to the bulk ‘d0` ferromagnetic materials, researches have predicted that the 2D III-VI (gallium oxides/chalcogenides and indium oxides/chalcogenides)31-35 and IV-VI (tin oxides/chalcogenides and lead oxides)36-38 semiconductors, and . . .

     

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