Hot phonon effects and auger recombination on 3 μm room temperature lasing in hgte-based multiple quantum well diodes

HIGHLIGHTS

  • who: A. A. Afonenko and collaborators from the Department of Radiophysics and Computer Technologies, Belarusian State University, Minsk, Belarus Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia have published the paper: Hot phonon effects and Auger recombination on 3u2009u03bcm room temperature lasing in HgTe-based multiple quantum well diodes, in the Journal: (JOURNAL)
  • what: The authors propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. In this work given, the experimental results demonstrating stimulated emission under optical pumping29-31 and . . .

     

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