Ibil measurement and optical simulation of the di center in 4h-sic

HIGHLIGHTS

• who: Wenli Jiang et al. from the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China have published the paper: IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC, in the Journal: Materials 2023, 2023, 16, 16, 2935 x FOR PEER REVIEW Materials 2023, 16, x FOR PEER REVIEW of /2023/
• what: In this paper DI defects are studied via experiments and calculations. The authors attempt to simulate the luminescence related to defects by first-principles calculations derived from the defect formation energy optical transition. 3 of 13 . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or E-mail:

  If you don't have an account, you can create one here.