Identification of buffer and surface traps in fe-doped algan/gan hemts using y21 frequency dispersion properties

HIGHLIGHTS

• who: P. Vigneshwara Raja et al. from the XLIM Laboratory, CNRS, UMR, University of Limoges, Brive, France have published the research work: Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties, in the Journal: Electronics 2021, 3096 of 13/Dec/2021
• what: In the literature [8,11,40], it is reported that the surface traps may show a weak depenThe trapping the device inThe charge charge trapping influences influences in the Fe-doped Fe-doped AlGaN/GaN AlGaN/GaN HEMT device are are indency on temperature, as . . .
  

   

  

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