HIGHLIGHTS
- who: ZAIQI LOU et al. from the Institute Graduate School of Engineering Science, Kyushu University, Fukuoka, Japan have published the research: IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control, in the Journal: (JOURNAL)
- what: In this work, the high-side IGBT was omitted from the half-bridge circuit, because the module was designed specifically for evaluating the switching characteristics of the low-side IGBT.
- how: This paper clarifies the effect of gate inductance Lg inside IGBT modules on gate voltage spikes when a digital gate driver is employed . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.