HIGHLIGHTS
- What: In this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures. In this work, the influence of high temperature process steps such as tabula rasa (TR) and phosphorous gettering (G) on the long-term stability behavior in n -type FZ-Si wafers was investigated.
- Who: Melanie Mehler et al. from the University of Konstanz, Department of Physics , Konstanz , Germany have published the paper: Impact of high-temperature processing steps on the long-term stability . . .
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