HIGHLIGHTS
- who: Vassilios Constantoudis and collaborators from the Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Aghia Paraskevi, GreeceDepartment of Physics, University of Patras, GR , Patras, Greece have published the article: Impact of Line Edge Roughness on ReRAM Uniformity and Scaling, in the Journal: Materials 2019, 12, x FOR PEER REVIEW of /2019/
- what: The authors investigate the effects of_(LER) of electrode lines on the of_(ReRAM) device areas in cross-point architectures. InInorder get a better picture the of the LER impact area uniformity, onedevice can observe Figure 1a this to paper, the authors evaluate . . .
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