Improved electrical characteristics of algan/gan high-electron-mobility transistor with al2o3/zro2 stacked gate dielectrics

HIGHLIGHTS

• who: Cheng-Yu Huang et al. from the Department of Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan have published the research work: Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics, in the Journal: Materials 2022, 15, x FOR PEER REVIEW of /2022/
• what: This study demonstrated the improved electrical characteristics of AlGaN/GaN MOS-HEMT with Al2O3/ZrO2 stacked gate dielectrics.
• how: In this work a radio frequency (RF) co-sputter system was used to deposit 1 nm-thick Al2 O3 and . . .
  

   

  

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