HIGHLIGHTS
- who: Biyao Zhao and colleagues from the Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China College of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, China have published the Article: Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing, in the Journal: Nanomaterials 2022, 3001 of /2022/
- what: The authors investigate the annealing effects of TiN/Hf0.5 Zr0.5 O2 /TiN metal-ferroelectric-metal (MFM) capacitors by comparing microwave annealing (MWA) and rapid thermal annealing (RTA) at the same wafer temperature of 500 ◦ C. This investigation shows the potential . . .
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