HIGHLIGHTS
- who: Zhaohao Zhang from the (UNIVERSITY) have published the paper: Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs, in the Journal: (JOURNAL)
- what: This work shows the feasibility of FE FET for ultra-low-power applications with dynamic threshold adjustment. In this work, an innovative way to enhance the subthreshold characteristics effects by coupling back-gate voltage is proposed and realized initially with FE ETSOI MOSFETs.
SUMMARY
To fabricate an ultra-low-power CMOS integrated circuits, many researches have investigated field effect transistors (FETs) with new structures or . . .
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