Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around mosfets

HIGHLIGHTS

• who: YOUNG SUH SONG and colleagues from the Department of Electrical Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea , Department of Computer Science, Korea Military Academy, Seoul, Republic of Korea have published the research: Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs, in the Journal: (JOURNAL)
• what: In this framework, the aim of this article is to improve SHEs and gate current in GAA MOSFETs using the structure with hetero-gate-dielectric (HGD) .

SUMMARY

Gate-all-around metal-oxide . . .

 



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