Improving light extraction efficiency of algan-based deep ultraviolet light-emitting diodes by combining thinning p-algan/p-gan layer with ni/au/al high-reflectivity electrodes

HIGHLIGHTS

  • who: -AlGaN et al. from the (UNIVERSITY) have published the article: Improving Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Combining Thinning p-AlGaN/p-GaN Layer With Ni/Au/Al High-Reflectivity Electrodes, in the Journal: (JOURNAL)
  • what: The authors have proposed a method by thinning the p-AlGaN/p-GaN layer combined with depositing Ni/Au/Al electrodes for high-performance DUV-LEDs.

SUMMARY

    Many methods have been adopted to reduce the absorption of p-GaN and Ni/Au electrodes for improving the LEE, such . . .

     

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