HIGHLIGHTS
- who: Ezgi Dogmus and colleagues from the Institute of Electronics, Microelectronics and Nanotechnology (IEMN), AvPoincaré have published the paper: InAlGaN/GaN HEMTs at Cryogenic Temperatures, in the Journal: Electronics
- what: The authors report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. In this paper, the 2DEG properties of this specific heterostructure are investigated for a temperature range of 4-400 K. Furthermore, InAlGaN/AlN/GaN HEMTs using 120 nm gate lengths (LG ) have been fabricated and . . .
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