HIGHLIGHTS
- who: Qinshu Li from the (UNIVERSITY) have published the Article: Inelastic phonon transport across atomically sharp metal/semiconductor interfaces, in the Journal: (JOURNAL) of 20/08/2021
- what: The authors show that even for two materials with similar Debye temperatures (Al/Si, Al/GaN), a substantial portion of phonons will transport inelastically across their interfaces at high temperatures, significantly enhancing interface thermal conductance. The authors report the observation of inelastic phonon transport across high-quality Al/Si and Al/GaN interfaces grown by MBE. The analysis codes that support the findings of the study are . . .
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