Influence of carbon layer on the properties of ni-based ohmic contact to n-type 4h-sic

HIGHLIGHTS

• who: A. Kuchuk et al. from the Institute of Physics, PAS of Poland, AlLotnikow, Warsaw, Poland have published the article: Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC, in the Journal: (JOURNAL) of 27/Nov/2012
• what: In this paper we have reported on electrical and structural properties of Ni-based contacts to n-type 4H-SiC having additional interfacial layer of carbon.
• future: In the future work the authors plan to investigate the effect of interfacial carbon layer in contact metallization C/Si . . .
  

   

  

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