Influence of grain boundary scattering on the field-effect mobility of solid-phase crystallized hydrogenated polycrystalline in2o3 (in2o3:h)

HIGHLIGHTS

  • who: Yusaku Magari and colleagues from the Graduate School of Natural Science and Technology, Shimane University, Nishikawatsu, Matsue, Japan have published the Article: Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H), in the Journal: Nanomaterials 2022, 2958 of 24/08/2022
  • what: (In2:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (µFE ) exceeding 100 cm2 V-1 s-1 are promising candidates for future electronics applications. this study the authors investigated the . . .

     

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