Influence of n2 plasma treatment on properties of black phosphorus devices in space electronic systems

HIGHLIGHTS

  • Who: Shenli Wang from the Key Lab of Micro‑Nanoelectronic Materials and Devices, Faculty of Microelectronics, Hubei University, Wuhan, China Department have published the research work: Influence of N2 plasma treatment on properties of black phosphorus devices in space electronic systems, in the Journal: (JOURNAL)

SUMMARY

    As space activities become more competitive, the new space systems requirements such as increased functionality and reduced volume make the need for advanced microelectronic devices even more urgent. When designing chips, it is common to integrate devices and circuits into the smallest possible area to produce cheaper . . .

     

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