HIGHLIGHTS
- who: Gyeongyeop Lee et al. from the Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Korea have published the Article: Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors, in the Journal: Micromachines 2022, 13, 901. of /2022/
- what: In this study, the effect of displacement defects on SiC power MOSFETs is investigated by technology computer-aided design (TCAD) simulation . The authors investigate vulnerability and tolerance to specific locations and provide physical insight into displacement defects.
SUMMARY
As a result, the deeper . . .
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