Inpbi quantum dots for super-luminescence diodes

HIGHLIGHTS

• who: Liyao Zhang et al. from the Department of Physics, University of Shanghai for Science and Technology, Shanghai, China have published the research: InPBi Quantum Dots for Super-Luminescence Diodes, in the Journal: (JOURNAL)
• what: In this paper quantum dot (QD) is proposed to serve as the active material for future SLDs. This work provides a feasible way to fabricate SLDs based on InPBi QDs for the potential application in OCT.
• how: In this paper finite element method (FEM) was employed to simulate the strain distribution in InPBi QDs/InAlAs/InP system and . . .
  

   

  

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