HIGHLIGHTS
- who: Abdul K. Rumaiz and colleagues from the Brookhaven Laboratory, Upton, New York, USA Department of Electrical Engineering, Stony Brook University, Stony Book, New York, USA have published the Article: Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy, in the Journal: AIP Conference Proceedings 2552, 010001 (2023) of 06/01/2023
- what: The authors investigate interface chemistry and the Schottky barrier height of Y and well electron-blocking contacts and Ge(100) surfaces using hard x-ray photoelectron spectroscopy. For precise . . .
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