HIGHLIGHTS
- who: Jingtao Zhao from the Institut e of Applied Electronics, China have published the Article: Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses, in the Journal: Scientific Reports Scientific Reports
- what: Through analysis and comparative experiments, it is confirmed that trapping induced by deep traps is the main reason for this phenomenon.
SUMMARY
The output waveform monitored by oscilloscope when microwave pulses were reverse injected into the output end of GaN-HEMT power amplifier was shown in Fig 5. The pulse width of 500 ns . . .
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