Interferometric in-situ iii/v semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-vernier-scale measurement

HIGHLIGHTS

• who: Interferometric in-situ III/V semiconductor et al. from the Kaiserslautern (T UK have published the article: Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement, in the Journal: (JOURNAL)
• what: RAS equipment is used to monitor and control III/V semiconductor etch depths during RIE processes with high precision.

SUMMARY

Reactive ion etching (RIE) is widely applied in crystalline semiconductor technology, e_g, for the etching of multilayered III/V semiconductor samples like GaAs/AlxGa1-xAs heterostructures . . .

 



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