HIGHLIGHTS
- who: Yuan-Ming Chen et al. from the Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan, Taiwan have published the research: Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator, in the Journal: Materials 2021, 970 of /2021/
- how: The authors used the LPO to grow oxidized InAlAs film on a Schottky layer for fabricating inverted-type InAlAs/InAs MOS-HEMT.
SUMMARY
The conventional Si-based field effect transistors are reaching the scaling limit in logic devices. Several laboratories have . . .
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