Investigation into the mocvd growth and optical properties of ingan/gan quantum wells by modulating nh3 flux

HIGHLIGHTS

• who: Zhenyu Chen and colleagues from the State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences have published the research: Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux, in the Journal: Crystals 2023, 13, x FOR PEER REVIEW of /2023/
• what: In this study the surface morphology and luminescence characteristics of InGaN/GaN multiple wells were studied by applying different flow rates of ammonia during growth . . .
  

   

  

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