Investigation of the combined effect of total ionizing dose and time-dependent dielectric breakdown on pdsoi devices

HIGHLIGHTS

• who: Jianye Yang et al. from the School of Microelectronics, Xidian University, Xi'an, China have published the paper: Investigation of the Combined Effect of Total Ionizing Dose and Time-Dependent Dielectric Breakdown on PDSOI Devices, in the Journal: Micromachines 2022, 1432 of /2022/
• what: The main reason for the drift of the device output characteristic curve, threshold voltage, and transconductance is that the internal Si-O bond will break to form an oxide trap due to the strong electric field effect inside the gate oxide layer caused by the TDDB stress. The main reason . . .
  

   

  

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