Isothermal anisotropic magnetoresistance in antiferromagnetic metallic irmn

HIGHLIGHTS

• who: R. Galceran from the Institut Paris-Saclay, Palaiseau, FranceUniversity of have published the Article: Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn, in the Journal: Scientific Reports Scientific Reports
• what: The authors focus on the AMR effect in an IrMn layer grown on top of an insulating FM (La2CoMnO6) and magnetically coupled to it. Now the authors focus on magnetotransport characterization performed on the LCMO/IrMn stack and on an IrMn control film (Si/IrMn). The authors report sizeable AMR response of 0.15% in LCMO/IrMn bilayer system that is uniquely ascribed to IrMn . . .
  

   

  

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