Isotropic tft characteristics in the {100}-oriented grain-boundary-free laser-crystallized si thin films

HIGHLIGHTS

• who: Nobuo Sasaki and colleagues from the Consulting, Kawasaki, Japan have published the paper: Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films, in the Journal: Crystals 2023, 13, x FOR PEER REVIEW of /2023/
• what: The authors characterize sub-Bs in the GB-free films and demonstrate isotropic characteristics of TFTs, including the threshold voltage and subthreshold swing of TFTs, as well as mobility. The authors propose a new current model across the sub-Bs, which is different from the conventional thermionic emission model.
• future: If . . .
  

   

  

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