Kinetics of the low-pressure chemical vapor deposited tungsten nitride process using tungsten hexafluoride and ammonia precursors

HIGHLIGHTS

• who: Johan G. Hulkko and collaborators from the Department of Chemistry-Ångström Laboratory, Uppsala University, Uppsala have published the research work: Kinetics of the low-pressure chemical vapor deposited tungsten nitride process using tungsten hexafluoride and ammonia precursors, in the Journal: (JOURNAL)
• what: The aim of this study is to understand the growth behavior in the hot-wall LPCVD-WNx process using WF6, NH3, and Ar.
• how: XRD was performed on the samples using two D5000-systems from Siemens with a CuKα source (1.5418 Å). θ/2θ-data were collected using a standard . . .
  

   

  

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